The electrophonon resonance (EPR) effect in doped semiconductor superlattices (DSSL) are investigated by using the quantum kinetic equation (QKE) for electrons to obtain the general analytic expression for optical absorption coefficient. We also obtain an EPR condition as a function of the photon energy and plasma energy. In particular, anomalous behaviors of the EPR effect such as the splitting of EPR peaks for incident photon energy or plasma energy are discussed. This raises a possibility of detecting electric subbands in DSSLs experimentally by utilizing EPR effects.
The potential of manipulating the electronic heat capacity and Pauli susceptibility of hydrogenated AA-stacked graphene, silicon carbide, and hexagonal boron nitride bilayers is studied.
General analytic expression for the intensity-dependent absorption coefficient (IDAC) of an intense electromagnetic wave (IEMW) in two-dimensional electron systems (2DES) is obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron–optical phonon scattering in a doped semiconductor superlattice (DSSL). The dependence of IDAC on the amplitude E0 and the photon energy ℏΩ of an IEMW, the energy ℏωp and the temperature for a specific n-i-p-i superlattice of GaAs : Si / GaAs : Be is achieved due to a numerical method. The computational results show that not only the dependence of IDAC on ℏΩ but also the dependence of IDAC on ℏωp can be applied to optically detect the electric subbands in a DSSL.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.