Silicon carbide n-type metal-oxide-semiconductor field effect transistors (MOSFETs) with different p-body acceptor concentrations were characterized by Hall effect. Normally OFF MOSFETs with good transfer characteristics and low threshold voltage were obtained with a peak mobility of ∼145 cm2 V−1 s−1 for the lowest acceptor concentration. The results are explained in terms of an increase of Coulomb scattering centers when increasing the background doping. These scattering centers are associated to fixed oxide and trapped interface charges. Additionally, the observed mobility improvement is not related to a decrease of the interface states density as a function of background doping

The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology which includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.

In this work, electrical properties of lateral n-channel MOSFETs implanted with differentnitrogen doses in the channel region were measured by Hall-effect technique at 300K. A mobility improvement with increasing nitrogen implantation doses is observed. Interface trap density (Dit) was determined from the experimentally measured Hall carrier density. Our results show a high Dit near and within the conduction band that does not change significantly when the nitrogen implantation dose is increased, despite observed mobility improvement.