Articles you may be interested inIsotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon J. Appl. Phys.

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Nitrogen profile effects on the growth rate of gate oxides grown on nitrogen-implanted silicon

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Use of the single-source precursor dimethylgallium azide in the growth of GaN films has been explored. Thin polycrystalline films with strong (0002) preferred orientation were deposited over the temperature range 450-650 °C and the pressure range 2 x 10-5-3 x 10-4 Torr on (100) GaAs, (111) GaAs, (0001) sapphire, and quartz. Films deposited at the lower temperature (475 °C) were found to have a bandgap of approximately 3.3 eV. At higher temperatures the films were darker and cracks were evident on the surface. This darkening effect can be partially suppressed by the simultaneous use of dimethylhydrazine. The effect of GaN buffer layers deposited at low temperature prior to high-temperature film growth has been explored. An activation energy of 15 kcal/mol has been calculated for the deposition reaction. An increase in the precursor partial pressure was found to increase the growth rate sharply. GaN growth was also attempted from dimethylhydrizodimethylgallium; the resultant films were found to be polycrystalline, possessing poor surface morphology.