Abstract:Articles you may be interested inIsotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon J. Appl. Phys.
“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”
Section: The Prospect and Process Variantsmentioning
“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”
Section: The Prospect and Process Variantsmentioning
“…Table I indicates a preferential sputtering of O, and overall sputtering rates between 0.04 and 0.17 atoms per incident ion. 13 , which represents a small fraction of the oxygen areal densities of the preoxides ͑e.g., approximately 1.4ϫ10 16 O cm Ϫ2 in a 3 nm oxide film͒. Therefore, the preoxide thicknesses are not significantly altered by implantation.…”
Section: ϫ2mentioning
confidence: 89%
“…For example, in the case of 3 nm thick preoxides, these ratios can be estimated as 0.30, 0.25, and 0.03 for 10 16 N cm Ϫ2 implants ͑Fig. 2͒, and as 0.50, 0.40, and 0.17 for 10 17 N cm Ϫ2 implants ͑Fig.…”
Section: ϫ2mentioning
confidence: 99%
“…Therefore, the preoxide thicknesses are not significantly altered by implantation. However, for 10 17 N cm Ϫ2 implants, the total number of sputtered atoms should stay in the range (0.3-1.2)ϫ10 16 O cm…”
Section: ϫ2mentioning
confidence: 99%
“…Plasma immersion implantation pulse voltages in the range 200-1000 V, and fluences from 10 16 to 10 17 N cm Ϫ2 were implanted into thermally grown SiO 2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum.…”
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