Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO)

Abstract

Articles you may be interested inIsotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon J. Appl. Phys.

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

“…Oxynitride prepared by NH 3 nitridation would introduce a large amount of traps because of the hydrogen incorporation and the amount of nitrogen incorporation at high temperature (>1000°C) is still too low (<5%) [70,71,[85][86][87] to improve the j value. With the advantages of low hydrogen content and the selflimited low growth rate, N 2 O oxide permits a better control of film thickness and slightly increases the resistance to boron diffusion [88][89][90][91][92][93][94][95][96][97][98][99][100][101][102][103][104][105].…”

Ultrathin silicon oxynitride film formation by plasma immersion nitrogen implantation

“…Table I indicates a preferential sputtering of O, and overall sputtering rates between 0.04 and 0.17 atoms per incident ion. 13 , which represents a small fraction of the oxygen areal densities of the preoxides ͑e.g., approximately 1.4ϫ10 16 O cm Ϫ2 in a 3 nm oxide film͒. Therefore, the preoxide thicknesses are not significantly altered by implantation.…”

“…For example, in the case of 3 nm thick preoxides, these ratios can be estimated as 0.30, 0.25, and 0.03 for 10 16 N cm Ϫ2 implants ͑Fig. 2͒, and as 0.50, 0.40, and 0.17 for 10 17 N cm Ϫ2 implants ͑Fig.…”

“…Therefore, the preoxide thicknesses are not significantly altered by implantation. However, for 10 17 N cm Ϫ2 implants, the total number of sputtered atoms should stay in the range (0.3-1.2)ϫ10 16 O cm…”

“…Plasma immersion implantation pulse voltages in the range 200-1000 V, and fluences from 10 16 to 10 17 N cm Ϫ2 were implanted into thermally grown SiO 2 films, with thicknesses between 3 and 6 nm. The areal densities of N and O in the resulting oxynitride films were determined by nuclear reaction analysis, before and after annealing in high-vacuum.…”