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Articles you may be interested inUltralow energy boron implants in silicon characterization by nonoxidizing secondary ion mass spectrometry analysis and soft x-ray grazing incidence x-ray fluorescence techniques High precision measurements of arsenic implantation dose in silicon by secondary ion mass spectrometry AIP Conf.The need to measure depth profiles of ultralow energy ͑ULE͒ ion implants in silicon, required for р180 nm IC device technology, has placed unprecedented requirements of high depth resolution and depth accuracy for the technique of secondary ion mass spectrometry ͑SIMS͒. The classic SIMS approaches to depth profiling ion implants employed in у250 nm device technologies are not valid for characterizing ULE implants. One reason is that the SIMS artifacts, typically observed at р30 nm, now occur in the depth range of the ULE implant. Two approaches have been proposed to overcome this. They are ͑i͒ oblique incidence bombardment, at less than 60°to the surface normal, with oxygen flooding, and ͑ii͒ normal incidence bombardment without oxygen flooding. The principle of both these approaches is the same, and requires the analytical surface to be modified to promote consistent secondary ion yields. Studies show the need to reduce the bombarding angle to Ͻ60°when using oxygen flooding. Depth profiling with this analytical condition is 3ϫ faster than by normal incidence bombardment. When using normal incidence bombardment, a greater shift towards the surface is observed due to a differential sputtering rate in the very near-surface region. With either approach, the depth resolution is the same after this initial sputtering rate increase.Oblique incidence bombardment appears to be the best approach to characterize both ''as-implanted'' and annealed ULE ion implants under ONE instrumental condition.

0) transition of CN(X1 2S+) where the uncertainty is statistical only and represents ± 1 . There is an additional uncertainty in this measurement that arises from the difficulty in measuring the excimer laser beam cross section and the quantum yield for CN production.From the line strength, 5, of a rovibronic transition, we can determine the transition moment, RV"'y, from the equation27 S = exp(-£"/m|/VT[lexp(-hcu/kt)] where Q is the partition function at temperature T, Sis the rotational linestrength for the transition, and £"is the energy of the lower state (in cm"1). We determine a value of |/? 2 = 0-3 ± 0.5) X 10"38 (esu cm)2. We can compare this to the value obtained by Treffers32 of |£01|2 = (7.5 ± 3.1) X 10"4 5au = (4.8 ± 2.0) X 10~39 (esu cm)2. The difference between these two values can most likely be ascribed to the difficulty of measuring the number density of CN in both experiments.

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