A series of abrasives with various hardness values including monocrystalline and polycrystalline diamond, α- and γ-alumina, zirconia, ceria, and silica were used to examine the concept of chemical-assisted polishing for finishing the (0001), c-plane (basal plane), of sapphire. Diaspore, a monohydrate of alumina, was also evaluated. Atomic force microscopy suggested that the hydrated layer of the c-plane surface was about 1 nm thick. Polishing experiments were designed to determine whether the chemically modified surface hydration layer forms on the basal plane in water. The results indicate that harder abrasives do not necessarily cause faster material removal and better surface finish for similar abrasive particle size. Abrasives with hardness equal to or less than sapphire such as α-Al2O3 and γ-Al2O3 achieved the best surface finish and greatest efficiency of material removal. It is proposed that the (0001) c-plane sapphire surface was modified by water to form a thin hydration layer with structure and hardness close to diaspore. This reaction layer can be removed by an abrasive that is softer than sapphire but harder than the reaction layer. α-Al2O3 was particularly effective. This result is attributed to adhesion between identical reaction layers on the basal planes of the alumina abrasive and the sapphire. This demonstrates that high removal rates and good surface finish can be achieved without costly diamond polishing.
The ballistic performance of state‐of‐the‐art silicon carbide armor material can exhibit a fairly wide variability in certain test configurations, which, it is proposed, may be due to the presence of large (>0.1 mm), rare defects, termed, herein, “anomalous” defects. SiC rubble resulting from ballistic tests was examined, as were quasi‐static test samples. Ballistic fragment fracture surfaces revealed large carbonaceous defects that seemed to affect fracture path and mode. Low‐strength biaxial flexure samples demonstrated similar defects (>0.1 mm) as failure origins. Carbonaceous defects similar in appearance but smaller in size were also found at the fracture origins of SiC bend bars. Frequently, alumina inclusions were found within the carbonaceous discontinuities. These alumina inclusions may cause the graphitic regions to form during sintering. The random distribution of such large, rare carbonaceous discontinuities from sample‐to‐sample, as well as batch‐to‐batch variability, may explain high ballistic variability for SiC armor ceramics.
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