Chemical mechanical polishing (CMP) anisotropy in sapphire

Zhu, Honglin; Tessaroto, Luiz A.; Sabia, Robert; Greenhut, Victor A.; Smith, Maynard B.; Niesz, Dale E.

doi:10.1016/j.apsusc.2004.04.027

Cited by 169 publications

(144 citation statements)

References 7 publications

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“…Under the same condition, the results showed the Ra of sapphire polished with silica sol abrasive was lower than that with silicon carbide and alumina abrasives. The effect of the hardness of the abrasives on CMP of (0001) plane sapphire was researched by Zhu et al [17], and the results showed that hard abrasives (such as monocrystalline and polycrystalline diamond, α-Al 2 O 3 ) improve MRR of sapphire, but surface average roughness (Ra) increased. However, a lower Ra value could be reached by using silica sol as the polishing abrasive for sapphire, but the MRR of sapphire was lower too.…”

Section: Introductionmentioning

confidence: 99%

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

2017

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Abstract:The chemical mechanical polishing (CMP) process has become a widely accepted global planarization technology. The abrasive material is one of the key elements in CMP. In the presented paper, an Ag-doped colloidal SiO 2 abrasive is synthesized by a seed-induced growth method. It is characterized by time-of-flight secondary ion mass spectroscopy and scanning electron microscopy to analyze the composition and morphology. The CMP performance of the Ag-doped colloidal silica abrasives on sapphire substrates is investigated. Experiment results show the material removal rate (MRR) of Ag-doped colloidal silica abrasives is obviously higher than that of pure colloidal silica abrasives under the same testing conditions. The surfaces that are polished by composite colloidal abrasives exhibit lower surface roughness (Ra) than those polished by pure colloidal silica abrasives. Furthermore, the acting mechanism of Ag-doped colloidal SiO 2 composite abrasives in sapphire CMP is analyzed by X-ray photoelectron spectroscopy, and analytical results show that element Ag forms Ag 2 O which acts as a catalyst to promote the chemical effect in CMP and leads to the increasing of MRR.

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Section: Introductionmentioning

confidence: 99%

Preparation of Ag2O modified silica abrasives and their chemical mechanical polishing performances on sapphire

2017

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“…The dependence of the etching rates of single-crystal silicon on crystallographic orientation has also been reported by Sato et al (1999). Additionally, orientation-dependent topography formation was observed in FIB cutting (Lenius et al, 2011) and mechanical polishing (Zhu, 2004).…”

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confidence: 65%

Misorientation/local plastic strain manifestations in chemical etching color

Zhang

Matsuura

Ohno

2014

Micron

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“…However, the present research results show that the conventional CMP technology is hard to obtain high material removal rate (MRR) and perfect polished surface simultaneously due to the material's properties [3][4]. To acquire both high MRR and great polished surface quality simultaneously, ultrasonic vibration is introduced into conventional chemical mechanical polishing process, which has been proved to bevery useful to improve the polishing quality and efficiency for the hard and brittle materials [5][6][7], such as wafer and sapphire.…”

Section: Introductionmentioning

confidence: 99%