The rise of two-dimensional (2D) graphene-cognated crystals with nonzero band gaps like transition metal dichalcogenides has led to a rapidly increasing interest in their dimensionality-dependent anisotropic properties, which bear high potential for ultrathin electronics. 2D crystals of the III–VI metal chalcogenide InSe represent a new kind of material class predestined for the use in optoelectronic applications as highly responsive photodetectors and field-effect transistors. We present a solution-processable method for 2D ultrathin InSe nanosheets (≤5 nm with ligands, lateral sizes up to ∼800 μm) with a detailed characterization of the sheet formation by a lamellar ligand templated growth. Optical and electrical transport properties, as well as in depth analysis of the crystal structure and stoichiometry of the colloidal nanosheets by electron and atomic force microscopy, X-ray photoelectron spectroscopy, and scattering methods complete this comprehensive study on a wet-chemical alternative to produce ultrathin InSe nanosheets.

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Solution-processable, two-dimensional semiconductors are promising optoelectronic materials which could find application in low-cost solar cells. Lead sulfide nanocrystals raised attention since the effective band gap can be adapted over a wide range by electronic confinement and observed multi-exciton generation promises higher efficiencies. We report on the influence of the contact metal work function on the properties of transistors based on individual two-dimensional lead sulfide nanosheets. Using palladium we observed mobilities of up to 31 cm(2) V(-1) s(-1). Furthermore, we demonstrate that asymmetrically contacted nanosheets show photovoltaic effect and that the nanosheets' height has a decisive impact on the device performance. Nanosheets with a thickness of 5.4 nm contacted with platinum and titanium show a power conversion efficiency of up to 0.94% (EQE 75.70%). The results underline the high hopes put on such materials.