2016
DOI: 10.1021/acs.chemmater.5b04646
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Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets

Abstract: The rise of two-dimensional (2D) graphene-cognated crystals with nonzero band gaps like transition metal dichalcogenides has led to a rapidly increasing interest in their dimensionality-dependent anisotropic properties, which bear high potential for ultrathin electronics. 2D crystals of the III–VI metal chalcogenide InSe represent a new kind of material class predestined for the use in optoelectronic applications as highly responsive photodetectors and field-effect transistors. We present a solution-processabl… Show more

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Cited by 115 publications
(122 citation statements)
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“…InSe is a van der Waals layered bulk semiconductor with highly promising photodetecting properties and FET mobilities of up to 1000 cm methods, atomically thin mono/double layers of InSe can be obtained (inorganic layer thickness 0.8-1.7 nm, ≤ 5 nm including ligands), a thickness hardly accessible by exfoliation methods [16]. Figure 1a shows a TEM image of multiple stacked InSe layers separated from each other by their stabilizing ligand decylamine.…”
Section: Colloidal Ultrathin Inse Nanosheetsmentioning
confidence: 99%
“…InSe is a van der Waals layered bulk semiconductor with highly promising photodetecting properties and FET mobilities of up to 1000 cm methods, atomically thin mono/double layers of InSe can be obtained (inorganic layer thickness 0.8-1.7 nm, ≤ 5 nm including ligands), a thickness hardly accessible by exfoliation methods [16]. Figure 1a shows a TEM image of multiple stacked InSe layers separated from each other by their stabilizing ligand decylamine.…”
Section: Colloidal Ultrathin Inse Nanosheetsmentioning
confidence: 99%
“…31 If the thickness is in direction and the lateral growth is along the [0001] and [11][12][13][14][15][16][17][18][19][20] axis, the calculated XRD shows sharp (002) and (110) peaks with increased intensity, while the (100) peak is broadened and less intense.…”
mentioning
confidence: 99%
“…In consistent with the above, J. Lauth et. al [7] reported experimentally that ultrathin InSe layers exhibits a broad absorption peak in the visible region at around 560 nm (~ 2.2 eV). Hence InSe and Te doped InSe monolayer could absorb a significant amount of solar light.…”
Section: Resultsmentioning
confidence: 99%