2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self-limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In 2 S 3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In 2 S 3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In-S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 10 3 ), a high detectivity (D* ≈ 2.71 × 10 9 Jones), and fast photoresponse speed (τ R = 14 ms, τ D = 8 ms). The as-proposed self-limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices.photoresponse speed (τ R = 14 ms, τ D = 8 ms), indicating high promising applications in optoelectronics. The present self-limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials.