Relativistically originated spin-orbit torque is one of the promising ways to control magnetization dynamics of ferromagnet which can be useful for next generation spintronic memory applications. Lot of effort has been made to address the physical origin of spin-orbit torque and improve its efficiency. In this work we demonstrate that in ultrathin chromium /Nickel (Cr/Ni) hetero-structure, spin-orbit torque significantly increases for Cr thickness below 6 nm. We have also observed unconventional sign of field like torque which can be attributed to the interfacial Rashba kind of coupling. We experimentally obtain that approximately 35 Oe Rashba kind of magnetic field is created on 8 nm thick in-plane magnetized Ni film when 10 8 A/cm 2 current density flows through Cr layer.

Spin-gapless semiconductors with their unique band structure have recently attracted much attention due to their interesting transport properties that can be utilized in spintronics applications. We have deposited the thin films of a quaternary spin-gapless semiconductor CoFeMnSi Heusler alloy on MgO (001) substrates using a pulsed laser deposition system. These films show epitaxial growth along the (001) direction and display a uniform and smooth crystalline surface. The magnetic properties reveal that the film is ferromagnetically soft along the in-plane direction and its Curie temperature is well above 400 K. The electrical conductivity of the film is low and exhibits a nearly temperature independent semiconducting behaviour. The estimated temperature coefficient of resistivity for the film is -7 Â 10 -10 X m/K, which is comparable to the values reported for spingapless semiconductors.

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Polycrystalline bilayer thin film of multiferroic [Ba(Zr0.2Ti0.8)O3‐0.5(Ba0.7Ca0.3)TiO3]/CoFe2O4([BZT‐0.5BCT]/CFO) has been deposited on Pt/Si (100) substrate using a pulsed laser deposition technique. The dielectric analysis reveals a significant change in the dielectric constant (~39% at a typical frequency of 100 Hz) at room temperature when a magnetic field is applied, in addition to a substantial improvement in the saturation polarization. A low leakage current density (~ 5 × 10−7 A/cm2) and a high magnetoelectric coupling coefficient (αE) both in the transverse (~2.085 V/Oe cm) as well as in the longitudinal (~0.708 V/cm Oe) directions, indicate in‐principle usability of this system for multifunctional device applications in thin film form.