One of the possible complications of subclavian vein puncture is entry into the subclavian artery. If this is not recognized, a pacemaker lead may be placed arterially. Since this may lead to systemic emboli, the pacemaker lead must be removed. This case report describes a patient in whom an atrial lead was inadvertently placed in the ascending aorta, where it had good sensing values but poor atrial capture threshold values. This lead was subsequently removed and hemostasis was achieved with intraarterial balloon compression via the brachial artery.
A study of the diffusion of ion-implanted Sb in Si0 2 by means of Rutherford backscattering spectrometry showed that the major fraction of the implanted Sb is immobile in Si0 2 upon annealing at temperatures as high as 1200·C in N 2 , °2, or 02/H20 ambients. When the oxide is encapsulated by an Si3N4 film during annealing, no diffusion is observed at all. To mobilize implanted Sb, extra oxygen has to be supplied from the annealing ambient. The diffusion of Sb exhibits a lower activation energy in a N2 or O 2 ambient (1.3 eV) than in an 01/H 2 0 ambient (2.3 eV). The present result for the 0 1 ambient differs spectacularly from the data reported in the literature which gave an activation energy of 8.75 e V and a pre-exponential factor which was 27 orders of magnitude lower than value reported here. The diffusion of implanted Sb exhibits some similarity to that of implanted As. There is also evidence that Sb is incorporated on both silicon and oxygen sites of the Si0 2 network, i.e., in a way similar to As.
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