The U. S. Army Research Laboratory (ARL) has been exploring silicon and silicon carbide Super gate turn-off thyristors (SGTOs) for high power pulse switching required by Army survivability and lethality applications. Silicon SGTOs (3.5 cm 2 ) were pulsed at 5 kA with a half-sine current waveform measuring 1 ms at the base. The recovery time, or T q , of the devices was evaluated from the point at which the main current pulse fell to zero. Using a driver designed to provide both turn-on and turn-off signals, the T q was reduced to 10 μs. Smaller silicon carbide SGTOs (0.16 cm 2 ) were similarly evaluated for widepulse performance. They were switched several times at a peak current above 300 A, with an unassisted T q time of 30 μs. This paper provides details of the aforementioned pulse switching, as well as a description of continuing evaluations involving parallel devices and larger test beds.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.