We study the photoresponse of single-layer MoS(2) field-effect transistors by scanning photocurrent microscopy. We find that, unlike in many other semiconductors, the photocurrent generation in single-layer MoS(2) is dominated by the photothermoelectric effect and not by the separation of photoexcited electron-hole pairs across the Schottky barriers at the MoS(2)/electrode interfaces. We observe a large value for the Seebeck coefficient for single-layer MoS(2) that by an external electric field can be tuned between -4 × 10(2) and -1 × 10(5) μV K(-1). This large and tunable Seebeck coefficient of the single-layer MoS(2) paves the way to new applications of this material such as on-chip thermopower generation and waste thermal energy harvesting.
The ability to achieve near-unity light-extraction efficiency is necessary for a truly deterministic single-photon source. The most promising method to reach such high efficiencies is based on embedding single-photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light-extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching-induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguides, we demonstrate a 24-fold enhancement in the single-photon flux, corresponding to a light-extraction efficiency of 42%. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p–n junction.
In semiconducting nanowires, both zinc blende and wurtzite crystal structures can coexist. The band structure difference between the two structures can lead to charge confinement. Here we fabricate and study single quantum dot devices defined solely by crystal phase in a chemically homogeneous nanowire and observe single photon generation. More generally, our results show that this type of carrier confinement represents a novel degree of freedom in device design at the nanoscale.
We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor-liquid-solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ ~ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 μeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.
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