Periodic structures with a sub-wavelength pitch have been known since Hertz conducted his first experiments on the polarization of electromagnetic waves. While the use of these structures in waveguide optics was proposed in the 1990s, it has been with the more recent developments of silicon photonics and high-precision lithography techniques that sub-wavelength structures have found widespread application in the field of photonics. This review first provides an introduction to the physics of sub-wavelength structures. An overview of the applications of sub-wavelength structures is then given including: anti-reflective coatings, polarization rotators, high-efficiency fiber-chip couplers, spectrometers, high-reflectivity mirrors, athermal waveguides, multimode interference couplers, and dispersion engineered, ultra-broadband waveguide couplers among others. Particular attention is paid to providing insight into the design strategies for these devices. The concluding remarks provide an outlook on the future development of sub-wavelength structures and their impact in photonics.

Individual and coupled quantum dots containing one or two electrons have been realized and are regarded as components for future quantum information circuits. In this Letter we map out experimentally the stability diagram of the few-electron triple dot system, the electron configuration map as a function of the external tuning parameters, and reveal experimentally for the first time the existence of quadruple points, a signature of the three dots being in resonance. In the vicinity of these quadruple points we observe a duplication of charge transfer transitions related to charge and spin reconfigurations triggered by changes in the total electron occupation number. The experimental results are largely reproduced by equivalent circuit analysis and Hubbard models. Our results are relevant for future quantum mechanical engineering applications within both quantum information and quantum cellular automata architectures.

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We report on the ultraclean emission from single quantum dots embedded in pure wurtzite nanowires. Using a two-step growth process combining selective-area and vapor-liquid-solid epitaxy, we grow defect-free wurtzite InP nanowires with embedded InAsP quantum dots, which are clad to diameters sufficient for waveguiding at λ ~ 950 nm. The absence of nearby traps, at both the nanowire surface and along its length in the vicinity of the quantum dot, manifests in excitonic transitions of high spectral purity. Narrow emission line widths (30 μeV) and very-pure single photon emission with a probability of multiphoton emission below 1% are achieved, both of which were not possible in previous work where stacking fault densities were significantly higher.