Short Notes K57 phys. stat. sol. (b)107 K57(1981) Subject classification: 13.4; 22.1.2 -, V. I. Lenin Belorussian State University, Minsk 1 ) Jahn-Teller Distortions of A-and E-Centers in Silicon BY V.V. SIDORIK and A.N. ZHEVNO In our calculations based on the Extended Hiickel Theory (EHT), we investigated
Short Notes K113 phys. stat. sol. (b)102, -K113 (1980) Subject classification: 13.4; 22.1.2 V. I. Lenin Belorussian State University, Minsk Effect of Noble Gas Atoms on the Energy Spectrum of Defects in Semiconductors BY 1) A. N. ZHEVNO, V.V. SIDOWK, and V.D. TKACHEVRecent results /1/ have shown that in luminescence spectra of silicon irradiated with ions of He, Ne, Ar, and K r atoms emission lines with a specific long-wave
The EPR spectrum due to the defect with high symmetry and labeled in /1/ as the Si-B3 center h a s been observed in irradiated boron-doped silicon. The intere s t in the nature of this defect becomes quite understandable if one takes into account the fact that further studies /1, 2/ did not allow the identification of the final structure of the center and the estimation of the role of boron atoms in i t s formation:The above mentioned defect is also of interest from a theoretical point of view and it is connected with the high D2d symmetry of this center. It is known that, with the exception of Si-GI. Si-G5, and Si-G25. the defects observed in silicon have a lower symmetry due to Jahn-Teller distortions.On the basis of the available experimental data /1, 2/, three models of the center are considered including several interstitial atoms localized in a tetrahedral (T) site. For, the first model, three intrinsic interstitial silicon atoms Sil, Si2, and Si3 are located on the [OOl] axis so that the Si3 atom is in the center of the T site, while Si and Si2 atoms are equidistant from a Si atom 1 3 along [OOl] and [OOa directions, respectively. In the second model an interstitial Si3 atom is replaced by a boron atom, and in case of the third model there is a vacant T site which i s the center of the defect. The following designations are introduced for the models considered : 31. 2I+B, and 21. The letter I stands for the intrinsic interstitial silicon atoms. In a l l the mentioned c a s e s the cente? has D2d symmetry (Fig. 1).using the extended HUckel theory. The latter proved useful in describing the spin density destribution on the atoms, MO coefficients, and the symmetry of the wave function of a paramagnetic electron as well a s the symmetry of the defects /3 to 5/. All our calculations were carried out in the model cluster consisting of 26 atoms of the first four coordination spheres with the center in the In our note we present calculations carried out in the Molkao approximation 1) Lehinskii Prospekt 4, 220 080 Minsk, USSR.
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