Application of ion doping into A Bthere is little information on physical processes occurring during implantation.In /1/ it is reported that ion implantation of G a P is accompanied by stoichiometric disturbances: the Ga: P concentration ratio is up to 1.5:l. Paper /1/ attributes it to a selective sputtering of lighter P atoms. However, theoretical calculations carried out on the basis of this model /2/ cannot explain the effect observed, compounds is hindered by the fact that Many A1' BV compounds a r e distinguished by a low binding energy characterised by the formation enthalpy (AH;). It is possible to put forward a hypothesis according to which the Low binding energy is a factor resulting in the decomposition of a compound under a beam. GaAs (AH: = -74.1 kJ/mol), In& (AHo = = -57.8 kJ/mol), InSb (AH: = -30.6 kJ/mol) belong to the group of materials possessing extremely low binding energy.To test the above hypothesis the present note investigates the behaviour of f InSb having minimum binding energy during implantation. For GaAs and InSb a description is given of the anomalous swelling phenomenon of the layer subjected to ion implantation /3, 4/, which results in a sharp increase of the irradiated layer volume and a deterioration of the electrophysical properties which a r e not restored even by annealing.Electron microscopic investigation of the anomalously swelled InSb layer shows that the layer is characterized by an intensive void formation. When joint voids form channels partially protruding on to the surface, they occupy up t o 50% of the total volume of the anomalously swelled layer. The higher the dose and mass of the implanted ion, the greater is the degree of porosity.
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