Semiconductor-metal transition in FeSi in an ultrahigh magnetic field

Kudasov, Yu. B.; Быков, А. И.; Dolotenko, M.I.; Kolokol'Chikov, N. P.; Monakhov, M. P.; Маркевцев, И. М.; Platonov, V.V.; Селемир, В. Д.; Tatsenko, O. M.; Filippov, A. V.; Volkov, A. G.; Povzner, A. A.; Bayankin, P. V.; Guk, V. G.; Kryuk, V. V.

doi:10.1134/1.558938

Cited by 18 publications

(25 citation statements)

References 11 publications

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“…Subsequently, measurements in ultra-high fields (cf. the discussion in Section (I B 2 b)) confirmed the existence of a discontinuous metamagnetic semiconductor-to-metal transition with B c ≈ 355T and T c < 77K [162,163].…”

Section: B Band-structures and Many-body Perturbation Theorymentioning

confidence: 54%

“…to metal crossover was continuous also in the magnetic signal, a sample cooled to T = 4.2K displayed a jump to a magnetic moment of 0.95µ B at a field of 355T [163], suggestive of a ferromagnetic metallic state. Moreover, the field-dependent resistivity was found to be strongly non-exponential, indicative of a Zeeman splitting beyond the rigid-band picture.…”

Section: Charge Degrees Of Freedommentioning

confidence: 92%

“…[159]. 12 Indeed, a ferromagnetic state can also be reached by doping, Fe 1−x CoxSi [99][100][101][102], expansion of the lattice by chemical pressure, FeSi 1−x Gex [96,97], as well as ultra-high magnetic fields [162,163] (cf. the discussion below).…”

Section: Charge Degrees Of Freedommentioning

confidence: 99%

“…Alternatively, a positive MR could be due to the proximity to a ferromagnetic instability. 15 Using ultra-high magnetic fields of up to spectacular 450T as produced by an explosively pumped flux compression generator, Kudasov et al [162,163] found the resistivity of FeSi to continuously decrease by several orders of magnitude. While at T = 77K the semi-conductor Note however, that numerical calculations for the Kondo lattice model [164] and the periodic Anderson model [165] suggest that with an applied magnetic field the spin gap collapses and a transverse AF order develops, while the charge gap remains finite up to higher fields.…”

Section: Charge Degrees Of Freedommentioning

confidence: 99%

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Thermoelectricity in correlated narrow-gap semiconductors

Tomczak

2018

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We review many-body effects, their microscopic origin, as well as their impact onto thermoelectricity in correlated narrow-gap semiconductors. Members of this class-such as FeSi and FeSb2display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators-such as Ce3Bi4Pt3 for which we present new results-and propose a general classification of paramagnetic insulators. From the latter FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we advert to new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

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Section: B Band-structures and Many-body Perturbation Theorymentioning

confidence: 54%

Section: Charge Degrees Of Freedommentioning

confidence: 92%

Section: Charge Degrees Of Freedommentioning

confidence: 99%

Section: Charge Degrees Of Freedommentioning

confidence: 99%

See 2 more Smart Citations

Thermoelectricity in correlated narrow-gap semiconductors

Tomczak

2018

Preprint

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“…Another important point in FeSi is the field-induced metamagnetic transition (MT). Kudasov et al [2,3] have observed a semiconductor-metal transition under extremely strong magnetic field of 350 T. As the sharp peaks of the density-of-states (DOS) exist at both sides of the Fermi level, the MT from the semiconducting state to ferromagnetic metal state is shown to take place under the magnetic field [1].…”

mentioning

confidence: 96%