Strain-induced metal-insulator (MI) transitions have been observed in degenerately doped Si:Sb and Ge:Sb crystals at T = 4.2 K and for extremely high uniaxial pressures up to 5 GPa. It is shown that in both Si and Ge the transition from a metallic-type to an activated conductivity is determined by strain-induced changes of the conduction band parameters. The data obtained demonstrate that the effective mass donor approach and the scaling theory of localization describe well the MI transition phenomenona observed.
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