Application of piezoresistance effect in highly uniaxially strained p‐Si and n‐Si for current‐carrier mobility increase

Abstract

Uniaxially strained channels occur in silicon p‐MOS transistors and n‐MOS transistors (IEDM Tech. Dig., pp. 61–64 (2002) and pp. 978–980 (2003) [1, 2]). Both longitudinal piezoresistance (PR) and transverse PR investigation in highly uniaxially strained p‐Si(B) and n‐Si(P) are presented. It is shown that the strong anisotropy of longitudinal PR and transverse PR are caused by the pressure‐induced change of isoenergetic surface shape, i.e. by the change of heavy‐hole effective mass and its anisotropy. In n‐Si the change of the longitudinal PR and transverse PR at X ∥ [100] is determined by both the change of the f‐transition probability with increasing pressure and the redistribution of electrons between the valleys with the effective mass m∥ (longitudinal PR) and m⊥ (transverse PR). (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Longitudinal magnetoresistance of uniaxially deformed n-type silicon

“…The latter, in turn, are associated with a number of features, in particular, the redistribution of electrons between valleys having effective electron masses of 0 26 , 0 m and 0 422 , 0 m respectively, leading to the appearance of negative magnetoresistance. This phenomenon was first experimentally observed in [3] in Germany when studying the longitudinal magnetoresistance at 20, 4 К, and its theoretical interpretation was given in the work [4].…”

DFM of Strained-Engineered MOSFETs Using Technology CAD

“…For the uniaxial strain-induced transformation of the isoenergetic surface, the deformed spheres transform into the oblate ellipsoid in the heavy-hole band and elongated ellipsoid in the light holes band (Kolomoets et al, 2009). For this case Ξ is function of β, i.e., ( ) Ξ β and:…”