Optical and electrical properties of transparent conductive oxide films of undoped and doped SnO2 and In2O3 prepared using the pyrolysis spray method were studied. The optical constants extracted from transmittance and reflectance measurements between 0.25 and 3 mu m are interpreted to give values of the direct allowed band gap (4.54 eV for SnO2:F and 3.80 eV for ITO) and the indirect forbidden band gap (2.77 eV for SnO2 and 2.90 eV for ITO). Typical SnO2:F and ITO films present high transmission ( approximately=85%) and resistivities of about (9*10-3-5*10-4) Omega cm and 10-1 Omega cm respectively. Suitable figures of merit allow a useful comparison to be made of the physical properties of the different films.