Physical properties of chemically sprayed tin oxide and indium tin oxide transparent conductive films

Abstract

Optical and electrical properties of transparent conductive oxide films of undoped and doped SnO2 and In2O3 prepared using the pyrolysis spray method were studied. The optical constants extracted from transmittance and reflectance measurements between 0.25 and 3 mu m are interpreted to give values of the direct allowed band gap (4.54 eV for SnO2:F and 3.80 eV for ITO) and the indirect forbidden band gap (2.77 eV for SnO2 and 2.90 eV for ITO). Typical SnO2:F and ITO films present high transmission ( approximately=85%) and resistivities of about (9*10-3-5*10-4) Omega cm and 10-1 Omega cm respectively. Suitable figures of merit allow a useful comparison to be made of the physical properties of the different films.

Synthesis and characterization of highly transparent and conductive SnO2:F and In2O3:Sn thin films deposited by spray pyrolysis

“…It is also observed that the refractive index of the SnO 2 films is significantly greater than that the ITO's. A similar behaviour of the n vs λ curves has been reported in the literature for ITO and SnO 2 films deposited by spray pyrolysis [14].…”

“…Phase, structure and lattice constants corresponding to ITO and SnO2 films prepared by spray pyrolysis using the synthesis parameters listed in XRD measurements indicated that the ITO films grow with cubic structure, whereas the SnO2:F films grow with tetragonal structure. In some samples, reflections associated to the Sn 21 Cl 16 (OH) 14 O 6 secondary phase were identified.…”

“…These results indicated that the ITO films grow with cubic structure, whereas the SnO 2 :F films grow with tetragonal structure. In some samples, reflections associated to the Sn 21 Cl 16 (OH) 14 O 6 (TOCH) phase were identified, which result probably as a consequence of an incomplete chemical reaction. In table 3 are listed data regarding the phase, structure and lattice parameters, of the ITO and SnO2 thin films, whose difractograms are shown in Fig.…”

The Remarkable Thermal Stability of Amorphous In‐Zn‐O Transparent Conductors

“…[35] Hence, the optical band gap for such transitions can be determined by plotting a 2 versus hv and extrapolating the linear portion of the curve to a 2 ¼ 0 as has been done by many groups for various crystalline and amorphous TCOs. [36][37][38][39][40][41][42][43][44] While we note that this formalism is not strictly valid for amorphous materials, modeling the measured optical spectra as a direct allowed transition provided a good fit to the data, much better than for assuming an indirect transition. For this analysis, the absorption coefficient was determined from the measured transmission (T) and reflection (R) spectra using…”

Síntesis de películas transparentes y conductoras utilizadas en celdas solares sensibilizadas por colorantes

“…El óxido de Indio dopado con Estaño más conocido como ITO (Indium Tin Oxide) es un material semiconductor tipo n con una brecha de energía prohibida (E g ) del orden de 3.7 eV, perteneciente al grupo de los materiales denominados TCO (óxidos transparentes-conductores) [3,4]. Se sintetizaron películas delgadas de ITO con propiedades adecuadas para usarlo como contacto eléctrico transparente en celdas solares DSSC.…”