By placing, in vacuum, a stack of transmission dynodes (tynodes) on top of a CMOS pixel chip, a single free electron detector could be made with outstanding performance in terms of spatial and time resolution. The essential object is the tynode: an ultra thin membrane, which emits, at the impact of an energetic electron on one side, a multiple of electrons at the other side. The electron yields of tynodes have been calculated by means of GEANT-4 Monte Carlo simulations, applying special lowenergy extensions. The results are in line with another simulation based on a continuous charge-diffusion model. By means of Micro Electro Mechanical System (MEMS) technology, tynodes and test samples have been realised. The secondary electron yield of several samples has been measured in three different setups. Finally, several possibilities to improve the yield are presented.

In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si N ) and atomic layer deposited alumina (AlO) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

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Abstract:The real and imaginary parts of the complex refractive index of SixNyHz have been calculated from first principles. Optical spectra for reflectivity, absorption coefficient, energy-loss function (ELF), and refractive index were obtained. The results for Si3N4 are in agreement with the available theoretical and experimental results. To understand the electron energy loss mechanism in Si-rich silicon nitride, the influence of the Si/N ratio, the positions of the access Si atoms, and H in and on the surface of the ELF have been investigated. It has been found that all defects, such as dangling bonds in the bulk and surfaces, increase the intensity of the ELF in the low energy range (below 10 eV). H in the bulk and on the surface has a healing effect, which can reduce the intensity of the loss peaks by saturating the dangling bonds. Electronic structure analysis has confirmed the origin of the changes in the ELF. It has demonstrated that the changes in ELF are not only affected by the composition but also by the microstructures of the materials. The results can be used to tailor the optical properties, in this case the ELF of Si-rich Si3N4, which is essential for secondary electron emission applications.