Investigations on the device with a tube-like electron beam have been carried out. The behaviour of the plasma-beam discharge in active moleculm gases at low pressures and at the pressure P = 1 Torr has been studied. The etching of crystalline silicon by active fluorine radicals has been carried out.

The efficiency of energy dissipation caused by the mechanism of turbulent plasma heating from a tube-like electron beam in a electronegative gas is measured calorimetrically. Amorphoiis Silayers are deposited from a SiHJBr discharge both on conducting and nonconducting substrates and are analyzed by means of Auger-spectromety. The velocity and specific energy of etching of Si0,-layers in a CF,-plasma are determined.Measured etching velocities of tungsten surfaces biased differently against the space potential provide information on the mechanism of plasma etching in a SF,-plasma. Simultaneously performed Langmuir-probe measurements permit predictions to be made on the properties of the etching plasma.