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The inelastic light scattering spectra of chalcopyrite structure ZnGeP2 crystals grown by an improved low temperature crystallization from the nonstoichiometric solution of this compound in the liquid Bi or liquid Tl solutions as well as grown by high temperature Bridgman technique has been investigated together with the optical absorption and electron transport measurements.

We report on the experimental and theoretical study of the near infrared inelastic electronic light scattering of the most promising high-efficiency tandem concentrator solar cells device structures based on n-and p-type GaAs, InP, InGaAs, and InGaAsP, grown by LPE. We show that the scattering mechanisms associated with charge-, spin-, and momentum-density fluctuations of free electron gas are represented by different line shapes and occurred in corresponding concentration ranges. New approach to the problem and observed results provide clear evidence that the sensitivity of the developed measurements in solar cell semiconductor structures provide a unique opportunity for their characterization and optimization.