A method is presented which allows the determination of the charge carrier concentration and mobility in n-GaP by Rainan spectroscopy of coupled plasmon-phonon modes. The results a m compared with those of electrical measurements.Es wird eine Methode fur die Bestimmung der Konzentration freier Ladungstrager und deren Beweglichkeit in n-GaP mittels Raman-spektroskopischer Messungen gekoppelter Plmmon-PhononModen vorgestellt. Die Ergebnisse werden mit denen elektrischer Messungen verglichen.
Larger hole concentrations and lower mobilities are measured by Raman scattering of p-GaP in comparison with results of Hall and conductivity investigations. The Hall factor which is responsible for the differences can be obtained bv these measurements and is discussed on the basis of a two-band model.
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