Determination of the hole concentration and mobility of p-GaP by Hall and by Raman measurements

Irmer, G.; Siegel, W.; Kühnel, G.; Monecke, J.; Yasuoka, Fátima M. M.; Bairamov, B. H.; Toporov, V. V.

doi:10.1088/0268-1242/6/11/007

Cited by 16 publications

(19 citation statements)

References 19 publications

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“…For the upper part of the NW, we can obtain more reliable fitting because the L+ peak is spectrally isolated. It should be also noted that even a small inhomogeneity in the form of an axial or radial gradient of n in the volume probed in the Raman experiment will also lead to an overestimation of µ while not having significant effect on the resulting value of n. It has been shown also for p-type and ntype thin-film samples that while the Raman method produces accurate results for n in comparison to Hall data the values of μ tend to be less consistent due to different scattering mechanisms [51,52]. Consequently, we will take the results of the carrier concentration as the important output of the Raman experiments and conclude that a gradient in the carrier concentration is evident along the NW axis, as shown in Fig.…”

Section: Raman Spectroscopymentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

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Dopant atoms can be incorporated into nanowires either via the vapor-liquid-solid mechanism through the catalyst droplet or by the vapor-solid growth on the sidewalls. Si is a typical n-type dopant for GaAs, but in nanowires it often suffers from a strongly amphoteric nature in the vapor-liquid-solid process. This issue can be avoided by using Te, which is a promising but less common alternative for n-type doping of GaAs nanowires. Here, we present a detailed investigation of Te-doped self-catalyzed GaAs nanowires. We use several complementary experimental techniques, such as atom probe tomography, off-axis electron holography, micro-Raman spectroscopy, and single-nanowire transport characterization, to assess the Te concentration, the free-electron concentration, and the built-in potential in Te-doped GaAs nanowires. By combing the experimental results with a theoretical model, we show that Te atoms are mainly incorporated by the vapor-liquid-solid process through the Ga droplet, which leads to both axial and radial dopant gradients due to Te diffusion inside the nanowires and competition between axial elongation and radial growth of nanowires. Furthermore, by comparing the free-electron concentration from Raman spectroscopy and the Te-atom concentrations from atom probe tomography, we show that the activation of Te donor atoms is 100% at a doping level of 4 × 10 18 cm −3 , which is a significant result in terms of future device applications.

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Section: Raman Spectroscopymentioning

confidence: 99%

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Hakkarainen

Piton

Fiordaliso

et al. 2019

Phys. Rev. Materials

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“…where C is the (dimensionless) Faust-Henry coefficient. For coupled phonon-hole plasmon systems, ε(ω) can be described by 55 ( )…”

Section: B Raman Spectroscopic Measurements 1 P-type Gasb Raman Spementioning

confidence: 99%

“…χ intra (ω) is composed of contributions from the light and heavy hole intra-valence band transitions and can be expressed as:55 is the respective hole plasmon damping parameter and i p ω is the respective hole plasma frequency. Equation (10) can be simplified by employing an average hole optical effective massEq.…”

mentioning

confidence: 99%

Raman spectroscopic determination of hole concentration in p-type GaSb

Maslar

Hurst

Wang

2008

Journal of Applied Physics

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Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by ≈20% to ≈65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

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“…[2][3][4][5][6][7][8][9][10][11][12][13] A number of papers reported that there was a reasonable agreement between the spectroscopic and electrical measurements. However, the carrier mobility obtained from the spectroscopic techniques was occasionally smaller than those obtained from the electrical measurements.…”

Section: Introductionmentioning

confidence: 99%

“…However, the carrier mobility obtained from the spectroscopic techniques was occasionally smaller than those obtained from the electrical measurements. 2,4,5,12,14,15 This discrepancy may arise from the following causes: ͑i͒ For the determination of the drift mobility of the carriers, the Hall factor correction is required. However, this correction has often been neglected, because of the lack of information of the Hall factor, which depends on the temperature and the impurity concentration.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

Nakashima

Harima

2004

Journal of Applied Physics

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Raman spectroscopic study of the electrical properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport method Raman characterization of local electrical properties and growth process in modulation-doped 6H-SiC crystals J. Appl. Phys. 95, 3547 (2004); 10.1063/1.1655682Raman scattering from LO phonon-plasmon coupled modes and Hall-effect in n-type silicon carbide 4H-SiC Raman and infrared reflection spectroscopies provide us information on electronic properties in polar semiconductors. In the present work, we have employed a dielectric function including the LO phonon damping in addition to the TO phonon damping and free carrier damping, and analyzed observed spectra of n-type 4H-SiC crystals. The carrier density and mobility obtained from the line shape analysis as the best fit parameters are compared with those obtained using the conventional classical dielectric function. It is recognized that the LO phonon damping has a significant effect on the determination of the carrier mobility and density.

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Determination of the hole concentration and mobility of p-GaP by Hall and by Raman measurements

Cited by 16 publications

References 19 publications

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Te incorporation and activation as n -type dopant in self-catalyzed GaAs nanowires

Raman spectroscopic determination of hole concentration in p-type GaSb

Spectroscopic analysis of electrical properties in polar semiconductors with over-damped plasmons

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