Detailed electron microscopic investigations of the crystal structure defects exhibiting displacement fringe contrast in Te-doped GaAs (~-1 0 '~ 0 1 3 1~~) after thermal treatment at 800 to 900 "C are reported. These defects are demonstrated to be platelet-shaped precipitates resulting from decomposition of the supersaturated, solid solution of Te in GaAs. The displacement vector was found by a method based on the analysis of the intensities in the electron micrographs. The results are interpreted using the theoretical estimated distribution of Te impurity atoms caused by their interaction. npOBeAeHbI AeTanbHbIe 3JIeKTPOHHOMRKPOCKOnMgeCKMe HCCnenOBaHMH ne@eHTOB KpMCTaJIJlH~IeCHO% CTpYKTYpbl C KOHTpaCTOM nOJIOC CMeU(eHkifl B GaAs, JIerkipO-BaHHOM Te A 0 10" CM-3 Li IlOABeprHyTOM TepMOO6pa6OTKe npki 800 A 0 900 "c. nOKa3aH0, 9TO 3TM He@KTbI npeACTaBJIRI0T CO6Ofi IIJIaCTHB'iaTbIe BbIAeJleHAR M Ha OCHOBe aHaJIH3a PaCnpeneJIeHkiR MHTeHCABHOCTB Ha 3neKTpOHHOMMKpOCHOnki-nOJIy ¶eHHbIe pe3yJIbTaTbI PIHTepnpeTApyI0TCfi C I I O M O U b H ) TeOPeTH' ieCKHX OUeHOK PaCIIpeneJIeHMH IIpkiMeCHbIX aTOMOB Te, 06yCJIOBJIeHHOrO M X B3aklMOlle~CTBBeM. HBJIHIOTCH p e 3 y n b~a~o~ pacnana nepecmuemioro Tsepnoro pacmopa Te B GaAs. gecmx m06pame~wflx ne@eKToB onpeneneHa Bem'iwa HX semopa cMeqeaufi.
The dependence of the pseudopotential of free ions on the ion core electron structure approximation and on the description of the exchange and correlation scattering and pseudopotential nonlocality are discussed. An analysis is made of the Phillips-Kleinman method. The formfactors for 17 elements are calculated. The problem of the pseudopotential ambiguity is discussed on the basis of the Hartree-Fock Hamiltonian with nonorthogonal one-particle wave functions. It is shown that in the weak bond approximation the effective potential is unambiguous. k3CCJIeAyeTCFI 3aBHCHMOCTb IICeBAOIIOTeHIpWJIa CB060AHbIX HOHOB OT I I~H~J I H X~H H R 3JIeKTpOHHOG CTPYHTYPbI HOHHOI'O KOpa H OT OIIllCaIIHH 06MeHH01-0 II HOppeJIJI~&5OHHOrO PaCCeRHHJI EI HeJIOHaJIbHOCTb IlCeBHOlIOTeH~HaJla. PaCqeT IIPOBOHHJICR H a OCHOBe MeTOHa QHJIHIICa-HJIefiHMaHa. BbIJIH IIOCYHTaHbI @OPM@aKTOPbI EJIH 17 3JIeMeHTOB. 0 6 c y w~a e~c~ BOIIPOC HeOHH03HaYHOCTki EICeBHOIIOTeHqHaJIa B CBH3H C TaMHJIbTOHYIaHOM XapTpH-@OKa C HeOPTOrOHaJIbHblMH OHHOYaCTIIYHbIMH BOJIHOBbIMYI @YHKUHaFIMH. nOKa3aH0, YTO B I I~H~J I L T x w H H H cna60B CBR3H nOTeHL(HaJI HeOAH03Ha'leH.
Theoretical electron micrographs are constructed for edge dislocations located parallel to the foil surface and normally to the electron beam at g · b = 0 and s = 0. It is shown that these images are essentially different for two versions of taking into account the stress relaxation on the foil surface: a) by introducing a single image dislocation, b) by introducing, along with the image dislocation, an additional stress source, compensating a “fictitious” tangential component of the stress field. The empirical method of determining the nature of dislocation loops by the analysis of residual contrast at g · b = 0 and s = 0 is supported by the theoretical images.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.