Theoretical electron micrographs of edge dislocations in the case ofg ·b = 0,s = 0

Abstract

Theoretical electron micrographs are constructed for edge dislocations located parallel to the foil surface and normally to the electron beam at g · b = 0 and s = 0. It is shown that these images are essentially different for two versions of taking into account the stress relaxation on the foil surface: a) by introducing a single image dislocation, b) by introducing, along with the image dislocation, an additional stress source, compensating a “fictitious” tangential component of the stress field. The empirical method of determining the nature of dislocation loops by the analysis of residual contrast at g · b = 0 and s = 0 is supported by the theoretical images.

Quantified Conditions for Emitter‐Misfit Dislocation Formation in Silicon

“…The critical misfit condition.--The conditions under which misfit dislocations are generated have been discussed by many workers (21,(28)(29)(30)(31)(32)(33)(34)(35)(36). According to Prussin's model (31) the maximum stress caused by the lattice misfit strain of the undersized P atoms is proportional only to the surface concentration of P. When the yield stress of Si is exceeded, dislocations appear.…”