UTBOX25 substrates are now ready for high volume manufacturing, as first substrate of choice for planar Fully- Depleted technology. Smart CutTM technology demonstrates its capability to provide ultra thin SOI & BOX layers with extremely tight thickness control as low as ± 5 Aå. Substrates to support scaling down to 11 nm node, including strained SOI, are under development and first results are presented
Smart Cut ® Technology has recently been moved forward to a performance that seemed impossible until just recently. FDSOI requirements demand a method to transfer an ultra-thin crystalline layer with near perfect uniformity. Silicon thickness variation across all UTBOX wafers has reached +/-5 A all points all wafers, while at the same time roughness has been improved to reach 0.8 A 30x30 µm2 RMS. BOX is available over a wide range of thicknesses from 10 to 50nm, ready to satisfy all possible applications. Such development efforts have now passed process technology qualification [1] and provided a proven path for further node scaling [2]. This paper reports the latest achievements in state of the art thickness and roughness control, which is enabling very low variability for fully depleted devices today. Ultra-Thin Layer Requirements for Planar Fully Depleted (FD)Planar FDSOI technology is currently establishing itself as an alternative to 3D FinFET technology for future CMOS technology, with genuine SoC product level advantages stemming from its transistor design:• Improved electrostatics due to thin body transistor • Manufacturing processes and simplification due to planar FD-device architecture design and implant removal • Improved variability due to undoped channel • Dynamic Vt tuning for power consumption reduction and performance gain due to the ultra-thin and high quality BOX Mobile applications such as smartphones and tablets will first benefit from FDSOI technology, as low variability, Vt tuning and manufacturing simplifications enable lower Vmin levels of operation, higher energy efficiency as shown in Figure 1 and manufacturing cost benefits. Lowest AV T ever reported at 1.1 mV.µm with gate length of 25nm or shorter [3], now manifests itself as lower SRAM Vmin compared to the equivalent bulk design [4], as shown in Figure 2. With thin BOX, static and dynamic Vt tuning can be achieved with independent back gate bias for optimizing switching energy efficiency for advanced CPU [5].In addition, high performance applications will also benefit from Planar FDSOI technology, as demonstrated by Cheng et al [6], in a paper where they successfully integrated the compressive SiGe channel for boosting PFET performance. Figure 3 shows how a planar fully depleted technology can outperform a reference bulk low power technology [7]. 10.1149/05305.0039ecst ©The Electrochemical Society ECS Transactions, 53 (5) 39-46 (2013) 39 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-04-11 to IP
Devices using fully depleted undoped channels are among the most promising candidates for the next device generations due to their better immunity to short channel effects (SCE) (1) and to random dopant fluctuation. Channel engineering and control are then critical as silicon thickness fluctuation is a statistical source of VT variability and strained channels provide 47% increase in the drive current for NFETs (2) without any degradation for PFETs (3). SOI substrates from Soitec provide a complete set of manufacturing solutions either for planar or three-dimensional (FinFET) devices as they pre-integrate critical characteristics of the transistors within the wafer structure itself. Substrate robustness and readiness have been demonstrated. For planar devices the SOI thickness uniformity is controlled at +/-5A (6sigma value, all sites, all wafers) in high volume manufacturing mode. For three-dimensional devices, substrate requirements are extremely close to partially depleted ones which are in high volume manufacturing for more than 7 years.
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