Using the modified method of limited X-ray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loop-shaped dislocations in the centre of the sample. The other source located in the interior parts of the crystal creates the edge defect pilings. rpaMM WccneAosano pacnpeaenenae ge@eKToB no Tonume nenZ[PmnbIx KpHcTan-c nOMO4bH) MOA%€@E%UWpOBtUIHOI'O M6!TOAa OrpaHW'IeHHblX PeHTreHOBCKMX TOnO-JIOB KPeMHHR. 06napymen0, 9 T O B HaHHblX KptrCTa~~aX CyIlleCTByeT ABa HCT09-HMKa HWCJIOKtUtMfi, OAMH M 3 KOTOPbIX AeRCTByeT y n0BepXHOCTH W reHepHpyeT ne~neo6pa3nble mc.noKaumi B cepenmie o6passa. Apyroti E~CTO'IHHK, pacnonomennuti B rny6me HpmTanna, npmoam K B O~H H H H O B~H H I O nepn@epHtinMx cHonnenuti Ae@emoB.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.