The X‐ray topographic investigation of defect distribution in dendritic silicon crystals along their cross section

Abstract

Using the modified method of limited X-ray topographs the distribution of defects along the silicon dendritic thickness was investigated. It is found that there are two dislocation sources in the given crystals, one of which acts near the surface and generates the loop-shaped dislocations in the centre of the sample. The other source located in the interior parts of the crystal creates the edge defect pilings. rpaMM WccneAosano pacnpeaenenae ge@eKToB no Tonume nenZ[PmnbIx KpHcTan-c nOMO4bH) MOA%€@E%UWpOBtUIHOI'O M6!TOAa OrpaHW'IeHHblX PeHTreHOBCKMX TOnO-JIOB KPeMHHR. 06napymen0, 9 T O B HaHHblX KptrCTa~~aX CyIlleCTByeT ABa HCT09-HMKa HWCJIOKtUtMfi, OAMH M 3 KOTOPbIX AeRCTByeT y n0BepXHOCTH W reHepHpyeT ne~neo6pa3nble mc.noKaumi B cepenmie o6passa. Apyroti E~CTO'IHHK, pacnonomennuti B rny6me HpmTanna, npmoam K B O~H H H H O B~H H I O nepn@epHtinMx cHonnenuti Ae@emoB.