In the present-day communications speech signals get contaminated due to various sorts of noises that degrade the speech quality and adversely impacts speech recognition performance. To overcome these issues, a novel approach for speech enhancement using Modified Wiener filtering is developed and power spectrum computation is applied for degraded signal to obtain the noise characteristics from a noisy spectrum. In next phase, MMSE technique is applied where Gaussian distribution of each signal i.e. original and noisy signal is analyzed. The Gaussian distribution provides spectrum estimation and spectral coefficient parameters which can be used for probabilistic model formulation. Moreover, a-priori-SNR computation is also incorporated for coefficient updation and noise presence estimation which operates similar to the conventional VAD. However, conventional VAD scheme is based on the hard threshold which is not capable to derive satisfactory performance and a soft-decision based threshold is developed for improving the performance of speech enhancement. An extensive simulation study is carried out using MATLAB simulation tool on NOIZEUS speech database and a comparative study is presented where proposed approach is proved better in comparison with existing technique.
<span lang="EN-US">Growing endless demand for digital processing technology, to perform high speed computations with low power utilization and minimum propagation delay, the metal-oxide-semiconductor (MOS) technology is implemented in the areas of very large scale integrated (VLSI) circuit technology. But MOS technology is facing the challenges in linear scaling the transistors with different channel modelling for the present day microelectronic regime. Linear scaling of MOSFET is restricted through short-channel-effects (SCEs). Use of silicon N-channel double gate MOSFETs (DG MOSFETs) in present day microelectronic regime features the short channel effect of MOSFET through a reasaonable forward transfer admittance with the characteristics of varying input capacitance values ratio. In this research paper, a distinct ρ-based model is designed to simulate SCEs through the designed silicon N-channel double gate MOSFETs with the varying front and back gate doping level and surface regions to estimate the varying junction capacitances can limit the intrusion detection systems (IDS) usage in VLSI applications. Analytical model for channel length and simulated model for total internal device capacitance through distinct ρ-based model are presented. The proposed distinct ρ-based model is suitable for silicon nanowire transistors and the effectiveness of the proposed model is validated through comparative results.</span>
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