The occurrence of metallic conductivity in SrTiO3 single crystals is reported for reduction under low partial pressure of oxygen at 800 degrees C. This transition is shown to result from the formation of a high concentration of vacancy defects along a network of extended defects within the skin region. A self-healing phenomenon is observed for progressive reduction which causes the concentration of initially introduced defects to decrease in the course of heat treatment and leads to a breakdown of the metallic conductivity as well as a substantial loss of optical subgap absorption.

Effects of substrate temperature and near-substrate plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide J. Appl. Phys. 94, 5514 (2003); 10.1063/1.1615694 Erratum: "Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by rf magnetron sputtering" [J.

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Rapid thermal annealing by, e.g., laser scanning of hydrogenated amorphous silicon (a-Si:H) films is of interest for device improvement and for development of new device structures for solar cell and large area display application. For well controlled annealing of such multilayers, precise knowledge of temperature and/or hydrogen diffusion length in the heated material is required but unavailable so far. In this study, we explore the use of deuterium (D) and hydrogen (H) interdiffusion during laser scanning (employing a continuous wave laser at 532 nm wavelength) to characterize both quantities. The evaluation of temperature from hydrogen diffusion data requires knowledge of the high temperature (T > 500 °C) deuterium-hydrogen (D-H) interdiffusion Arrhenius parameters for which, however, no experimental data exist. Using data based on recent model considerations, we find for laser scanning of single films on glass substrates a broad scale agreement with experimental temperature data obtained by measuring the silicon melting point and with calculated data using a physical model as well as published work. Since D-H interdiffusion measures hydrogen diffusion length and temperature within the silicon films by a memory effect, the method is capable of determining both quantities precisely also in multilayer structures, as is demonstrated for films underneath metal contacts. Several applications are discussed. Employing literature data of laser-induced temperature rise, laser scanning is used to measure the H diffusion coefficient at T > 500 °C in a-Si:H. The model-based high temperature hydrogen diffusion parameters are confirmed with important implications for the understanding of hydrogen diffusion in the amorphous silicon material.