The triboelectrification of conducting materials can be explained by electron transfer between different Fermi levels. However, triboelectrification in dielectrics is poorly understood. The surface dipole formations are shown to be caused by the contact-induced surface lattice deformations. An Atomistic Field Theory (AFT) based formulation is utilized to calculate the distribution of the polarization, electric and potential fields. The induced fields are considered as the driving force for charge transfer. The simulation results show that a MgO/BaTiO 3 tribopair can generate up to 104 V /cm 2 , which is comprable with the data in the published literature.
A technique is presented for determination of the depletion of the etchant, etched depth, and instantaneous etch rate for Si etching with XeF2 in a pulsed etching system in real time. The only experimental data required is the pressure data collected temporally. Coupling the pressure data with the knowledge of the chemical reactions allows for the determination of the etching parameters of interest. Using this technique, it is revealed that pulsed etching processes are nonlinear, with the initial etch rate being the highest and monotonically decreasing as the etchant is depleted. With the pulsed etching system introduced in this paper, the highest instantaneous etch rate of silicon was recorded to be 19.5 µm min−1 for an initial pressure of 1.2 Torr for XeF2. Additionally, the same data is used to determine the rate constant for the reaction of XeF2 with Si; the reaction is determined to be second order in nature. The effect of varying the exposed surface area of Si as well as the effect that pressure has on the instantaneous etch rate as a function of time is shown applying the same technique. As a proof of concept, an AlN resonator is released using XeF2 pulses to remove a sacrificial poly-Si layer.
This paper studies the Mode II adhesion energy of a Poly-Si µcantilever stiction failed on a poly-Si substrate. A custom flexural microelectromechanical systems (MEMS) load cell and an interferometer are used to measure the applied forces and measure the deflections in real time. From this data the Mode II strain energy release rates were determined to range between 0.520-5.10 mJ m −2 .
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