The formation of large scale, highly uniform and controllable GaN microdome arrays based on a self-assembled low cost method was investigated. The deposition of a large area, hexagonally close-packed SiO 2 microsphere monolayer on top of the III-nitride semiconductor using the dip-coating method was optimized, which leads to surface coverage of 87% of SiO 2 on GaN (ideal close-packed microsphere surface coverage is 90.7%). Reactive ion etching was used to simultaneously etch both SiO 2 microspheres and GaN substrate to form GaN microdomes. Experiments show that GaN microdomes with controllable size, shape, and aspect ratio are achievable through controlling the plasma etching conditions.

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