Experimental exploration of the fabrication of GaN microdome arrays based on a self-assembled approach

Abstract

The formation of large scale, highly uniform and controllable GaN microdome arrays based on a self-assembled low cost method was investigated. The deposition of a large area, hexagonally close-packed SiO 2 microsphere monolayer on top of the III-nitride semiconductor using the dip-coating method was optimized, which leads to surface coverage of 87% of SiO 2 on GaN (ideal close-packed microsphere surface coverage is 90.7%). Reactive ion etching was used to simultaneously etch both SiO 2 microspheres and GaN substrate to form GaN microdomes. Experiments show that GaN microdomes with controllable size, shape, and aspect ratio are achievable through controlling the plasma etching conditions.

Simulation analysis of GaN microdomes with broadband omnidirectional antireflection for concentrator photovoltaics

“…Based on a self-assembled microsphere lithography approach, the experimental formation of the GaN microdomes on the 200 nm scale is still feasible. 33 surface is due to the rotation of the surface normal as the surface curves, which reduces the effective incidence angle for the incident light. Similar to Fig.…”

“…The fabrication of the GaN microdomes was based on a low cost and scalable self-assembled approach, which was presented in Ref. 33.…”

Self‐Assembled Silica Nanoparticles for Diamond Nano‐Structuration

“…Thus, this method is easier to implement in order to obtain nanoscale patterns with high aspect ratios. Different techniques like droplet evaporation, [15] dip coating, [16] wet-coating, [17] electrophoretic deposition, [18] dewetting of thin metal layers, [19] and Langmuir-Blodgett operations [20] are used to obtain an auto-assembly of nanoparticles on planar substrates.…”

Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs

“…As a result, most of the light emitted in a planar device structure is trapped inside GaN, resulting in a low LEE value. Many attempts have been made to improve the LEE, including applying different textures on the front LED or back sapphire surfaces [1][2][3][4] and using various micro/nanostructure PSS [5][6][7][8][9][10][11][12][13]. Current high-brightness LEDs are mostly grown on PSS, which has arrays of 3D patterns on its surface, often a pyramidal shape array.…”