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Most Fusarium head blight (FHB) resistant barley (Hordeum vulgare L.) accessions perform relatively poorly from an agronomic point of view. Due to the polygenic inheritance of FHB resistance, introgression of this complex trait into well-adapted elite germplasm will likely require multiple cycles of hybridization and selection to combine resistance and agronomic performance. The use of anther culture to produce doubled haploids would seem well justified to reduce the time required to achieve this goal. Unfortunately, little is known concerning the androgenic response of the small number of genotypes with known partial FHB resistance. To make the best use of such FHB resistance donors in a barley improvement program, we first characterized the FHB resistance of eight reported FHB resistance sources (Chevron, Gobernadora, Seijo II, Shyri, Svanhals, Zhedar I, F104-250-9 and C97-21-38-3) in our own FHB nursery in Quebec City (QC, Canada). In parallel, we assessed the androgenic response of these same eight lines with that of three cultivars (ACCA, Léger and Cadette) of known androgenic response. Finally, the androgenic response of F(1) hybrids involving some of these genotypes used as parents was measured and compared to that of the parental genotypes. Very large and significant differences were observed in the number of green plants produced by the different accessions and F(1)s. Although anther culture seemed very promising for some accessions, for others, the androgenic response was so low that a conventional approach would seem more appropriate.

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We used temperature-resolved cathodoluminescence to determine the characteristics of luminescence bands and carrier dynamics in edge-defined film-fed grown (EFG) beta-Ga2O3 single crystals synthesized by Tamura Corporation. The crystal is nominally undoped and has a (-201) surface orientation. The main impurities are Si, Ir, Al and Fe, with [Fe] ~ 10^17 cm-3 verified by Inductively Coupled Plasma Mass Spectrometry (ICP-MS). The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged up to 500 K. Depth-resolved analysis reveals the luminescence spectrum is independent of sampling depth. We observed a super-linear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trapping and charge transfer at Fe3+/2+ centers. The temperature-dependent properties of this UV band were found to be consistent with weakly bound electrons in selftrapped excitons with an activation energy of 48 +/-10 meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after remote hydrogen plasma treatment. The point defect responsible for the BL, likely an oxygen vacancy or a complex, is strongly coupled to the lattice with a Huang-Rhys factor S = 7.3.