A novel Si epitaxial growth technique using mercury-sensitized photochemical vapor deposition has been developed. Epitaxial thin films (300–8000 Å) were grown on (100)Si substrates at 100–300 °C from a gas mixture of Si2H6+SiH2F2+H2 by irradiation of a low pressure mercury lamp (1849,2537 Å). The growth rate, plotted as a function of the reciprocal substrate temperature, represented an activation energy which was found to be a small value of 0.18 eV. Observation of the surface structure by reflective high-energy electron diffraction showed fine (100) streak patterns for films grown at 200 °C as well as at 250 and 300 °C.

A new technique for silicon epitaxial growth has been developed using mercury—sensitized photochemical vapor deposition (photo—CVD). Epitaxial thin layers were grown on (100) Si substrates at 100–300ºC from a gas mixture of Si2H6+AiH2F2+H2 by irradiation of a low pressure mercury lamp (1849A, 2537A). Refiective high energy electron diffraction (RHEED) and Raman scattering measurements showed that the epitaxial layers had good crystallinities.The epitaxial layers were characterized by secondary ion mass spectroscopy (SIMS) and the van der Pauw Hall2 measurements. The undoped Si layer showed the electron mobility of 520cm2/Vs with a carrier concentration of 3.2xl04cm