Epitaxial growth of silicon by photochemical vapor deposition at a very low temperature of 200 °C

Abstract

A novel Si epitaxial growth technique using mercury-sensitized photochemical vapor deposition has been developed. Epitaxial thin films (300–8000 Å) were grown on (100)Si substrates at 100–300 °C from a gas mixture of Si2H6+SiH2F2+H2 by irradiation of a low pressure mercury lamp (1849,2537 Å). The growth rate, plotted as a function of the reciprocal substrate temperature, represented an activation energy which was found to be a small value of 0.18 eV. Observation of the surface structure by reflective high-energy electron diffraction showed fine (100) streak patterns for films grown at 200 °C as well as at 250 and 300 °C.

A review on photochemical effects of common plastics and their related applications

“…56,57 For example, some photochemical reactions can still proceed even at very low temperatures. 58 In addition, when the molecules are activated by heating, the distribution of molecular energy obeys the Boltzmann distribution. 59,60 And when molecules are activated by light, the distribution of molecular energy is non-equilibrium distribution 61 because molecules can be selectively excited in principle.…”

Characterization of silicon nitride films formed by synchrotron radiation-excited chemical vapor deposition

“…In order to obtain a stoichiometric film in this gas system, it is necessary to raise T S much more and/or make P N 2 / P SiH 4 higher without increasing the total pressure. 29,30 Infrared absorption spectra exhibited a peak for Si-N bonding ͑830-840 cm Ϫ1 ͒ in addition to one for Si-H ͑2170-2180 cm Ϫ1 ͒. Table I lists the typical deposition conditions for this work and other CVD processes, which are referred to hereafter.…”

Thin Epitaxial Silicon Regrowth Using Ion Implantation Amorphization Techniques

“…Recently, there have been a number of such epitaxial techniques described. These include deposition under ultrahigh vacuum Conditions (1,2), photoenhanced chemical vapor deposition (3), molecular beam epitaxy (4), and employment of ion implant amorphization and regrowth techniques (5,6). None of these techniques is fully satisfactory for use in a wafer manufacturing process.…”

“…None of these techniques is fully satisfactory for use in a wafer manufacturing process. Variously, this is because they use procedures or equipment which are both uncommon and untried in a production environment (1)(2)(3)(4), which are incompatible with some of the desired circuit configurations (5), or which put limitations on production throughput (5,6). In this group of techniques, the method utilizing ion implant amorphization and regrowth appears to offer most immediate promise for production utility since it departs least significantly from conventional manufacturing practice.…”