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In this paper, a de-embedding method is proposed for conducting accurate on-wafer device measurements in the gigahertz range. The method addresses issues of substrate coupling and contact effects and is therefore suitable for measurements with lossy technologies such as CMOS. The method assumes a probe-tip two-port calibration performed with well-known techniques and impedance substrates. By employing a physical interpretation of the test-fixture, the method alleviates a number of known problems with common de-embedding procedures. Four distinct mathematical steps are suggested to de-embed parasitics for the test-fixture to give an accurate measurement of the device under test. By introducing a simple compensation factor for in-fixture standard imperfections, the proposed method allows large devices to be measured with high accuracy. The applicability of the method is demonstrated with measurements up to 12 GHz. Index Terms-Calibration, CMOS analog integrated circuits, microwave measurements.Troels Emil Kolding (M'00) received the M.Sc. degree in electrical engineering from Aalborg University, Denmark, in 1996. Research for his final thesis was conducted with the Wireless Information Network Laboratory, Rutgers University, Piscataway, NJ. In 1996, he joined the RF Integrated Systems & Circuits (RISC) Group, Aalborg University, where he received the Ph.D. degree' in 1999.Since then, he has been Design Engineering Manager with the RISC group. His areas of specialized research interest include RF CMOS technology, highfrequency on-wafer measurements, and high-frequency device modeling.

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