Violet electroluminescence is rare in both inorganic and organic light-emitting diodes (LEDs). Low-cost and room-temperature solution-processed lead halide perovskites with high-efficiency and color-tunable photoluminescence are promising for LEDs. Here, we report room-temperature color-pure violet LEDs based on a two-dimensional lead halide perovskite material, namely, 2-phenylethylammonium (C6H5CH2CH2NH3(+), PEA) lead bromide [(PEA)2PbBr4]. The natural quantum confinement of two-dimensional layered perovskite (PEA)2PbBr4 allows for photoluminescence of shorter wavelength (410 nm) than its three-dimensional counterpart. By converting as-deposited polycrystalline thin films to micrometer-sized (PEA)2PbBr4 nanoplates using solvent vapor annealing, we successfully integrated this layered perovskite material into LEDs and achieved efficient room-temperature violet electroluminescence at 410 nm with a narrow bandwidth. This conversion to nanoplates significantly enhanced the crystallinity and photophysical properties of the (PEA)2PbBr4 samples and the external quantum efficiency of the violet LED. The solvent vapor annealing method reported herein can be generally applied to other perovskite materials to increase their grain size and, ultimately, improve the performance of optoelectronic devices based on perovskite materials.

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In the past, the formation of microscale patterns in the far field by light has been diffractively limited in resolution to roughly half the wavelength of the radiation used. Here, we demonstrate lines with an average width of 36 nanometers (nm), about one-tenth the illuminating wavelength lambda1 = 325 nm, made by applying a film of thermally stable photochromic molecules above the photoresist. Simultaneous irradiation of a second wavelength, lambda2 = 633 nm, renders the film opaque to the writing beam except at nodal sites, which let through a spatially constrained segment of incident lambda1 light, allowing subdiffractional patterning. The same experiment also demonstrates a patterning of periodic lines whose widths are about one-tenth their period, which is far smaller than what has been thought to be lithographically possible.

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We investigate the bias-stress effect in field-effect transistors (FETs) consisting of 1,2-ethanedithiol-treated PbS quantum dot (QD) films as charge transport layers in a top-gated configuration. The FETs exhibit ambipolar operation with typical mobilities on the order of μ(e) = 8 × 10(-3) cm(2) V(-1) s(-1) in n-channel operation and μ(h) = 1 × 10(-3) cm(2) V(-1) s(-1) in p-channel operation. When the FET is turned on in n-channel or p-channel mode, the established drain-source current rapidly decreases from its initial magnitude in a stretched exponential decay, manifesting the bias-stress effect. The choice of dielectric is found to have little effect on the characteristics of this bias-stress effect, leading us to conclude that the associated charge-trapping process originates within the QD film itself. Measurements of bias-stress-induced time-dependent decays in the drain-source current (I(DS)) are well fit to stretched exponential functions, and the time constants of these decays in n-channel and p-channel operation are found to follow thermally activated (Arrhenius) behavior. Measurements as a function of QD size reveal that the stressing process in n-channel operation is faster for QDs of a smaller diameter while stress in p-channel operation is found to be relatively invariant to QD size. Our results are consistent with a mechanism in which field-induced nanoscale morphological changes within the QD film result in screening of the applied gate field. This phenomenon is entirely recoverable, which allows us to repeatedly observe bias stress and recovery characteristics on the same device. This work elucidates aspects of charge transport in chemically treated lead chalcogenide QD films and is of relevance to ongoing investigations toward employing these films in optoelectronic devices.

We describe a process to transform commercial textiles and threads into electric heaters that can be cut/sewn or woven to fashion lightweight fabric heaters for local climate control and personal thermal management. Off-the-shelf fabrics are coated with a 1.5 μm thick film of a conducting polymer, poly(3,4-ethylenedioxythiophene), using an improved reactive vapor deposition method. Changes in the hand feel, weight, and breathability of the textiles after the coating process are imperceptible. The resulting fabric electrodes possess competitively low sheet resistances-44 Ω/□ measured for coated bast fiber textiles and 61 Ω/□ measured for coated cotton textiles-and act as low-power-consuming Joule heating elements. The electrothermal response of the textile electrodes remain unaffected after cutting and sewing due to the robustness of the conductive coating. Coated, conductive cotton yarns can also be plain-woven into a monolithic fabric heater. A demonstrative circuit design for a soft, lightweight, and breathable thermal glove is provided.

Fabrics are pliable, breathable, lightweight, ambient stable, and have unmatched haptic perception. Here, a vapor deposition method is used to transform off-the-shelf plain-woven fabrics, such as linen, silk, and bast fiber fabrics, into metal-free conducting electrodes. These fabric electrodes are resistant to wear, stable after laundering and ironing, and can be bodymounted with little detriment to their performance. A unique by-product of conformally vapor coating plain-woven fabrics is that textile parameters, such as thread material and fabric porosity, significantly affect the conductivity of the resulting fabric electrodes. The resistivities of the electrodes reported herein are linearly, not exponentially, dependent on length, meaning that they can be feasibly incorporated into garments and other large-area bodymounted devices. Further, these fabric electrodes possess the feel, weight, breathability, and pliability of standard fabrics, which are important to enable adoption of wearable devices.All these characteristics are a result of the vapor deposition technique used to create our fabric electrodes, and cannot be replicated with solution techniques.