Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.

The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS2 and WSe2 using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarizationbased spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a five-fold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS2 that exhibits both valley-and energy-selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.

The optoelectronic properties of organic thin films are strongly dependent on their molecular orientation and packing, which in turn is sensitive to the underlying substrate. Hexagonal boron nitride (hBN) and other van der Waals (vdW) materials are known to template different organic thin film growth modalities from conventional inorganic substrates such as SiO2. Here, the morphology and temperature-dependent optical properties of pentacene films grown on hBN are reported. Pentacene deposited on hBN forms large-grain films with a molecular π-face-on orientation unlike the dendritic edge-on thin-film phase on SiO2. Pentacene/hBN films exhibit a 40 meV lower free exciton emission than pentacene/SiO2 and an unconventional emission energy temperature dependence. Time-resolved photoluminescence (PL) decay measurements show a long-lived signal in the π-face-on phase related to delayed emission from triplet–triplet fusion. This work demonstrates that growth on vdW materials provides a pathway for controlling optoelectronic functionality in molecular thin films.

Selective breaking of degenerate energy levels is a well-known tool for coherent manipulation of spin states. Though most simply achieved with magnetic fields, polarization-sensitive optical methods provide high-speed alternatives. Exploiting the optical selection rules of transition metal dichalcogenide monolayers, the optical Stark effect allows for ultrafast manipulation of valley-coherent excitons. Compared to excitons in these materials, microcavity exciton-polaritons offer a promising alternative for valley manipulation, with longer lifetimes, enhanced valley coherence, and operation across wider temperature ranges. Here, we show valley-selective control of polariton energies in WS2 using the optical Stark effect, extending coherent valley manipulation to the hybrid light-matter regime. Ultrafast pump-probe measurements reveal polariton spectra with strong polarization contrast originating from valley-selective energy shifts. This demonstration of valley degeneracy breaking at picosecond timescales establishes a method for coherent control of valley phenomena in exciton-polaritons.

CitationSmall signal modulation characteristics of red-emitting ( = 610nm) III-nitride nanowire array lasers on (001) silicon 2015, 106 (7):071108 Applied Physics Letters