A high-sensitivity boron-diffused silicon carbide (4H-SiC) p-n diode has been designed and fabricated using vapor-phase epitaxy. Boron-10 (10B) is diffused into nitrogen-doped n− SiC, forming the p+ layer, and thermal neutrons are detected through the ionization produced in the detector by 10B(n,α)7Li reactions. These detectors have been tested with thermalized neutrons from an isotopic californium-252 (252Cf) source and have been shown to provide a robust pulse-height spectrum, which is easily separable from the anticipated gamma-ray response. The detectors are expected to be useful for neutron and gamma-ray fluence rate measurements in high gamma-ray fields for extended times at temperatures up to 700°C.
With the need to improvement of speed of operation and the demand of low power MOSFET size scales down, in this paper, a 50 nm gate length n-type doped channel MOS (NMOS) is simulated using ATLAS packages of Silvaco TCAD Tool so as to observe various electrical parameters at this gate length. The parameters under investigation are the threshold voltage, subthreshold slope, on-state current, leakage current and drain induced barrier lowering (DIBL) by varying channel doping concentration, drain and source doping concentration and gate oxide thickness.
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