The first solid-state field-effect transistor has been fabricated utilizing a film of an organic macromolecule, polythiophene, as a semiconductor. The device characteristics have been optimized by controlling the doping levels of the polymer. The device is a normally off type and the source (drain) current can be modulated by a factor of 102–103 by varying the gate voltage. The carrier mobility and the transconductance have also been determined to be ∼10−5 cm2/V s and 3 nS, respectively, by means of electrical measurements.
synopsisPolyimide precursors were synthesized from a diamine and a diacid chloride that was derived from the reactant with promellitic dianhydride and 0-nitrobenzyl alcohol. Their thermal properties were studied in nitrogen using dynamic thermogravimetry, and the photoreaction mechanism was investigated by ultraviolet and infrared spectrophotometry. The polyimide precursors were spin-coated onto silicon wafers, prebaked, and then exposed to W light from a high pressure Hg-Xe lamp. When the f i l m s were dipped into 2% aqueous KOH after irradiation, the expased area dissolved forming high resolution Patterns. Relative sensitivities of the polymers were determined.
The temperature dependence of the J-V characteristics of an In/poly(N-methylpyrrole) junction device has been measured in order to investigate the junction properties. The barrier height and the effective Richardson constant of the junction have been determined to be 0.38 eV and 1.3*10-4 A cm-2 K-1 by the Richardson plots. The extremely small effective Richardson constant has been due to the existence of the composite layer, acting as a tunnelling one, formed by the reaction of the indium with the polymer surface.
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