The design and construction of a predictable quantum efficient detector (PQED), suggested to be capable of measuring optical power with a relative uncertainty of 1 ppm (ppm = parts per million), is presented. The structure and working principle of induced junction silicon photodiodes are described combined with the design of the PQED. The detector uses two custom-made large area photodiodes assembled into a light-trapping configuration, reducing the reflectance down to a few tens of ppm. A liquid nitrogen cryostat is used to cool the induced junction photodiodes to 78 K to improve the mobility of charge carriers and to reduce the dark current. To determine the predicted spectral responsivity, reflectance losses of the PQED were measured at room temperature and at 78 K and also modelled throughout the visible wavelength range from 400 nm to 800 nm. The measured values of reflectance at room temperature were 29.8 ppm, 22.8 ppm and 6.6 ppm at the wavelengths of 476 nm, 488 nm and 532 nm, respectively, whereas the calculated reflectances were about 4 ppm higher. The reflectance at 78 K was measured at the wavelengths of 488 nm and 532 nm over a period of 60 h during which the reflectance changed by about 20 ppm. The main uncertainty components in the predicted internal quantum deficiency (IQD) of the induced junction photodiodes are due to the reliability of the charge-carrier recombination model and the extinction coefficient of silicon at wavelengths longer than 700 nm. The expanded uncertainty of the predicted IQD is 2 ppm at 78 K over a limited spectral range and below 140 ppm at room temperature over the visible wavelength range. All the above factors are combined as the external quantum deficiency (EQD), which is needed for the calculation of the predicted spectral responsivity of the PQED. The values of the predicted EQD are below 70 ppm between the wavelengths of 476 nm and 760 nm, and their expanded uncertainties mostly vary between 10 ppm and 140 ppm, where the lowest uncertainties are obtained at low temperatures.

The predictable quantum efficient detector (PQED) is intended to become a new primary standard for radiant power measurements in the wavelength range from 400 nm to 800 nm. Characterization results of custom-made single induced junction photodiodes as they are used in the PQED and of assembled PQEDs are presented. The single photodiodes were tested in terms of linearity and spatial uniformity of the spectral responsivity. The highly uniform photodiodes were proved to be linear over seven orders of magnitude, i.e. in the radiant power range from 100 pW to 400 µW. The assembled PQED has been compared with a cryogenic electrical substitution radiometer with a very low uncertainty of the order of 30 ppm. Experimental results show good agreement with the modelled response of the PQED to optical radiation and prove a near unity external quantum efficiency.

A method of measuring the absolute spectral irradiance of quartz-halogen-tungsten lamps is described, based on the known responsivity of a filter radiometer, the components of which are separately characterized. The characterization is described for the wide wavelength range essential for deriving the spectrum of a lamp, from 260 nm to 950 nm. Novel methods of interpolation and measurement are implemented for the spectral responsivity of the filter radiometer. The combined standard uncertainty of spectral irradiance measurements is less than 1.4 parts in 10 2 from 290 nm to 320 nm (ultraviolet B) and 4 parts in 10 3 from 440 nm to 900 nm (visible to near-infrared). As an example, the derived spectral irradiances of two lamps measured at the Helsinki University of Technology (HUT, Finland) are presented and compared with the measurement results of the National Institute of Standards and Technology (NIST, USA) and the Physikalisch-Technische Bundesanstalt (PTB, Germany). The comparisons indicate that the HUT spectral irradiance scale is between those of the NIST and the PTB in the wavelength range 290 nm to 900 nm. The long-term reproducibility of the spectral irradiance measurements is also presented. Over a period of two years, the reproducibility appears to be better than 1 part in 10 2 .

The spectral responsivity of a predictable quantum efficient detector (PQED) is calculated based on the responsivity of an ideal quantum detector and taking into account reflection losses from the surface of the photodiode and internal charge-carrier gains/losses inside the diode. The internal quantum deficiency (IQD) is obtained from simulations with the PC1D software using the material data of the produced PQED photodiodes. The results indicate that at room temperature the predicted IQD of the PQED is close to zero with an uncertainty of about 100 ppm over the visible range. It is further concluded that a primary standard of visible optical power with an uncertainty of approximately 1 ppm is achievable using the PQED at low temperatures.

Nonlinearities of the responsivity of various types of siliconphotodetectors have been studied. These detectors are based onphotodiodes with two sizes of the active area (10 x 10 mm(2) and 18 x 18 mm(2)). The detectorconfigurations investigated include single photodiodes, two reflectiontrap detectors, and a transmission trap detector. For all devices, the measured nonlinearity was less than 2 x 10(-4) forphotocurrents up to 200 muA. The diameter of themeasurement beam was found to have an effect on thenonlinearity. The measured nonlinearity of the trap detectorsdepends on the polarization state of the incident beam. Theresponsivity of the photodetectors consisting of the large-areaphotodiodes reached saturation at higher photocurrent values comparedwith the devices based on the photodiodes with smaller activearea.