Transport characteristics were investigated in a spin metal–oxide–semiconductor field-effect transistor (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. A bottom-gate type spin MOSFET was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In-plane magnetoresistance showed a square like hysteretic behavior, when measurements were performed with constant source–drain and source–gate biases. From the comparison with the magnetization-related resistance change resulting from the MnAs contacts, a highly possible origin of the feature obtained for the spin MOSFET is the spin-valve effect originating from the spin-dependent transport in the Si channel.
This paper proposes a nanometrically precise fabrication method for nanometric and millimetric structures on the same wafer. The advancement in deep reactive ion etching (DRIE) is enabling a number of applications of high aspect ratio nanostructures. However, DRIE conditions optimized for nano-size openings are often incompatible with large area etching due to the aspect-ratio dependence of optimum conditions. This paper proposes to solve the problem by a two-step etching method: the etching of nanostructures plus contours of large area openings followed by the etching of the rest. Both masking layers for nano+contour and the rest of the area are embedded prior to the first deep etching. This ‘embedded masking method’ ensures fine lithography on the flat surface. The second masking for the rest of the area is created by LOCOS. Following LOCOS the process created a uniform passivation to large area etching. Its capability has been shown by successful fabrication of 1.3 µm wide optical filters coexisting with millimetre-scale (0.15 mm × 2.7 mm) trenches.
We demonstrate that lanthanide ions doped in nanometrical silica helices with chirally arranged siloxane network without any organic mediates show induced chiroptical properties such as circular dichroism and circularly polarized...
A co-assembling system composed of a nonchiral metal-free dye and chiral-molecular-assembly template can be a promising candidate for circularly-polarized luminescent materials with both a high luminescence dissymmetry factor and strong emission.
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