Antireflection (AR) layer coated semiconductor laser diodes may have many applications,
particularly as external cavity diodes for optical memory heads. The electron cyclotron
resonance (ECR) sputtering system was used for preparing AR coatings which consist of both
SiO2 and Si3N4 phases. The refractive index and the thickness of the AR coatings were adjusted
by controlling numerous deposition parameters, including the relative flow ratio of O2 and N2
gas flow, the total gas flow rate, the RF and ECR power, and the deposition time. AR coated
AlGaAs laser diodes do not show a sharp threshold in the light output-current characteristic
curve and have good potential for application in the lensless optical floppy systems.
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