We have developed a hybrid-type temperature sensor using TFTs. We combined a transistor, capacitor, and ring oscillator and detected the temperature by measuring the oscillation frequency. The large temperature dependences of the offleakage currents can be utilized, and simultaneously only a digital circuit is required to count the digital pulse.
We have developed a hybrid‐type temperature sensor using TFTs. We combined a transistor, capacitor, and ring oscillator and detected the temperature by measuring the oscillation frequency. The large temperature dependences of the off‐leakage currents can be utilized, and simultaneously only a digital circuit is required to count the digital pulse.
SUMMARYWe propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is confirmed that the offset TFTs have larger temperature dependence of the on current. Next, temperature dependences of oscillation frequencies are compared between ring oscillators using the LDD and offset TFTs. It is clarified that the ring oscillator using the offset TFTs is suitable to detect the temperature. We think that this kind of temperature sensor is available as a digital device. key words: temperature sensor, ring oscillator, poly-Si, thin-film transistor (TFT), lightly-doped drain structure (LDD), offset drain structure
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