Hybrid-Type Temperature Sensor Using Thin-Film Transistors

Kimura, Mutsumi; Kojima, Kazuki; Mukuda, Tomonori; Kito, Katsuya; Hayashi, Hisashi; Matsuda, Tokiyoshi; Hiroshima, Yasushi; Miyasaka, Mitsutoshi

doi:10.1109/jeds.2014.2352218

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…Figure shows the frequency detection‐type sensor. Here, the circuit configuration is the same as that for the temperature sensor that we have published elsewhere . The advantage of the frequency detection‐type sensor is that no complicated analog circuit is necessary, whereas only a digital circuit is necessary for detection.…”

Section: Frequency Detection‐type Sensormentioning

confidence: 99%

“…Here, the circuit configuration is the same as that for the temperature sensor that we have published elsewhere. 17 The advantage of the frequency detection-type sensor is that no complicated analog circuit is necessary, whereas only a digital circuit is necessary for detection. Here, we combine a sensing transistor (Tsens), switching transistor (Tsw), storage capacitor (Cstr), ring oscillator, and pickup circuit.…”

Section: Analog Current Detection-type Sensormentioning

confidence: 99%

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Infrared sensors using poly‐Si thin‐film transistors for proximity sensors integrated in smartphone displays

et al. 2019

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We have developed infrared sensors using poly‐Si thin‐film transistors (TFTs) for proximity sensors integrated in smartphone displays. Initially, we evaluate the infrared sensitivities of the poly‐Si TFTs, and it is found that a pin‐type TFT is suitable for the infrared sensors. Next, we propose three types of the infrared sensors. First, an analog current detection‐type sensor has a simple structure, and it is found that it can detect presence of a hand. Second, a lock‐in detection‐type sensor has tolerance against ambient light, and it is found that it can detect a target signal under noise signals. Third, a frequency detection‐type sensor has an advantage that only a digital circuit is necessary for detection, and it is found that it can detect the infrared intensity because the oscillation frequency increases monotonically with the intensity. We can utilize these infrared sensors on demand.

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Section: Frequency Detection‐type Sensormentioning

confidence: 99%

Section: Analog Current Detection-type Sensormentioning

confidence: 99%

Infrared sensors using poly‐Si thin‐film transistors for proximity sensors integrated in smartphone displays

et al. 2019

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“…The oscillation frequency dependent on light illuminance is the same as that observed in the living retina. 27) The configuration of the photosensing circuit is similar to that of the temperature-sensing circuit published elsewhere, 28,29) but it is firstly applied to the retinal prosthesis in this study. The power consumption of a photosensing is measured to be 3.2 µW, which is discussed in the following section.…”

Section: Photosensing Circuitmentioning

confidence: 99%

Photosensing circuit using thin-film transistors for retinal prosthesis

Tomioka

Miyake

Misawa

et al. 2018

Jpn. J. Appl. Phys.

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A photosensing circuit using thin-film transistors (TFTs) for a retinal prosthesis has been developed. First, the TFTs that are low-temperature polycrystalline silicon (poly-Si) TFTs are fabricated on a transparent substrate, which enables us to build an epiretinal implantation system without using any extracorporeal cameras. Then, the photosensing circuit is fabricated by connecting a p/i/n-type phototransistor and a ring oscillator, which provides stimulating current pulses with an oscillation frequency dependent on light illuminance. In particular, the device structure of the p/i/n-type phototransistor is designed well on the basis of device physics, and the configuration of the photosensing circuit on the basis of device characteristics. Subsequently, a wireless power transfer system is architected by magnetic resonance coupling. Finally, a retinal prosthesis is produced by assembling the photosensing circuit and wireless power transfer system, and the stimulating performance is confirmed in an in vitro experiment, which suggests a future possibility of this retinal prosthesis.

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“…In contrast to the T&C-type and ring oscillator-type temperature sensors, the advantage of the hybridtype temperature sensor is that the large temperature dependences of the off-leakage currents can be utilized, and simultaneously only a digital circuit is required to count the digital pulse. In the previous reports [6], [7], we demonstrated hybrid-type temperature sensors using n and p-type TFTs. On the other hand, particularly in this presentation, we compare characteristics of hybrid-type temperature sensors using n, p, and pin-type TFTs.…”

Section: Introductionmentioning

confidence: 99%